Polysilicon Passivating Contacts for Silicon Solar Cells: Interface Passivation and Carrier Transport Mechanism

IBC c-Si solar cells based on ion-implanted poly-silicon passivating contacts

Ion-implanted poly-crystalline silicon (poly-Si), in combination with a tunnel oxide layer, is investigated as a carrier-selective passivating contact in c-Si solar cells based on an interdigitated back contact (IBC) architecture. The optimized poly-Si passivating contacts enable low interface recombination, resulting in implied VOC (iVOC) of about 720 mV and 704 mV for n-type and p-type, respe...

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Articles you may be interested in Compositional study of defects in microcrystalline silicon solar cells using spectral decomposition in the scanning transmission electron microscope Appl. Influence of back contact roughness on light trapping and plasmonic losses of randomly textured amorphous silicon thin film solar cells Appl. Photocurrent increase in n-i-p thin film silicon solar cells by gu...

Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

Production Technology for Passivation of Polycrystalline Silicon Solar Cells

Techniques for cost-efficient operation of SiNx:H systems with a capability for hydrogen passivation in a manufacturing environment are analyzed. We conclude that SiNx:H performance may be optimized by a variety of techniques, and that the cost and productivity of the deposition tool may be the determining factors in the industry’s decision for a particular technique. PECVD constitutes the curr...

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell front side. Targeting enhanced transparency, the poly-Si layer is replaced with a mixed-phase silicon oxide/silicon layer. This mixed-phase layer...